%0 Journal Article
%T Asymmetric Manipulation of Perpendicular Exchange Bias and Programmable Spin Logical Cells by Spin-Orbit Torque in a Ferromagnet/Antiferromagnet System.
%A Guo L
%A Shi G
%A Wang G
%A Su H
%A Zhang H
%A Tang X
%J Adv Sci (Weinh)
%V 0
%N 0
%D 2024 Jul 10
%M 38984445
%F 17.521
%R 10.1002/advs.202403648
%X Antiferromagnets are competitive candidates for the next generation of spintronic devices owing to their superiority in small-scale and low-power-consumption devices. The electrical manipulation of the magnetization and exchange bias (EB) driven by spin-orbit torque (SOT) in ferromagnetic (FM)/antiferromagnetic (AFM) systems has become focused in spintronics. Here, the realization of a large perpendicular EB field in Co/IrMn and the effective manipulation of the magnetic moments of the magnetic Co layer and EB field by SOT in Pt/Co/IrMn system is reported. During the SOT-driven switching process, an asymmetrically manipulated state is observed. Current pulses with the same amplitude but opposite directions induce different magnetization states. Magneto-optical Kerr measurements reveal that this is due to the coexistence of stable and metastable antiferromagnetic domains in the AFM. Exploiting the asymmetric properties of these FM/AFM structures, five spin logic gates, namely AND, OR, NOR, NAND, and NOT, are realized in a single cell via SOT. This study provides an insight into the special ability of SOT on AFMs and also paves an avenue to construct the logic-in-memory and neuromorphic computing cells based on the AFM spintronic system.