%0 Journal Article
%T Atomically Resolved Defect-Engineering Scattering Potential in 2D Semiconductors.
%A Chen HY
%A Hsu HC
%A Liang JY
%A Wu BH
%A Chen YF
%A Huang CC
%A Li MY
%A Radu IP
%A Chiu YP
%J ACS Nano
%V 18
%N 27
%D 2024 Jul 9
%M 38922204
%F 18.027
%R 10.1021/acsnano.4c02066
%X Engineering atomic-scale defects has become an important strategy for the future application of transition metal dichalcogenide (TMD) materials in next-generation electronic technologies. Thus, providing an atomic understanding of the electron-defect interactions and supporting defect engineering development to improve carrier transport is crucial to future TMDs technologies. In this work, we utilize low-temperature scanning tunneling microscopy/spectroscopy (LT-STM/S) to elicit how distinct types of defects bring forth scattering potential engineering based on intervalley quantum quasiparticle interference (QPI) in TMDs. Furthermore, quantifying the energy-dependent phase variation of the QPI standing wave reveals the detailed electron-defect interaction between the substitution-induced scattering potential and the carrier transport mechanism. By exploring the intrinsic electronic behavior of atomic-level defects to further understand how defects affect carrier transport in low-dimensional semiconductors, we offer potential technological applications that may contribute to the future expansion of TMDs.