Abstract：
The photosynaptic transistor stands as a promising contender for overcoming the von Neumann bottleneck in the realm of photo-communication. In this context, photonic synaptic transistors is developed through a straightforward solution process, employing an organic semiconducting polymer with pendant-naphthalene-containing side chains (PDPPNA) in combination with ligand-density-engineered CsPbBr3 perovskite quantum dots (PQDs). This fabrication approach allows the devices to emulate fundamental synaptic behaviors, encompassing excitatory postsynaptic current, paired-pulse facilitation, the transition from short-to-long-term memory, and the concept of \"learning experience.\" Notably, the phototransistor, incorporating the blend of the PDPPNA and CsPbBr3 PQDs washed with ethyl acetate, achieved an exceptional memory ratio of 104. Simultaneously, the same device exhibited an impressive paired-pulse facilitation ratio of 223% at a moderate operating voltage of -4 V and an extraordinarily low energy consumption of 0.215 aJ at an ultralow operating voltage of -0.1 mV. Consequently, these low-voltage synaptic devices, constructed with a pendant side-chain engineering of organic semiconductors and a ligand density engineering of PQDs through a simple fabrication process, exhibit substantial potential for replicating the visual memory capabilities of the human brain.
摘要：
光突触晶体管是克服光通信领域中的冯·诺依曼瓶颈的有希望的竞争者。在这种情况下，光子突触晶体管是通过简单的求解过程开发的，使用具有含萘的侧链(PDPPNA)的有机半导体聚合物与配体密度工程化的CsPbBr3钙钛矿量子点(PQD)组合。这种制造方法允许设备模拟基本的突触行为，包括兴奋性突触后电流，配对脉冲促进，从短期记忆到长期记忆的转变，和“学习经验”的概念。\"值得注意的是，光电晶体管，掺入用乙酸乙酯洗涤的PDPPNA和CsPbBr3PQD的混合物，实现了104的特殊内存比。同时,同一设备在-4V的中等工作电压下表现出令人印象深刻的成对脉冲促进率，为223％，在-0.1mV的超低工作电压下，能耗极低，为0.215aJ。因此,这些低电压突触装置，通过简单的制造工艺构建有机半导体的侧链工程和PQD的配体密度工程，表现出复制人脑视觉记忆能力的巨大潜力。
