PDF(Pubmed)
Abstract：
α-Ga2O3 films were grown on a c-plane sapphire substrate by HCl-supported mist chemical vapor deposition with multiple solution chambers, and the effect of HCl support on α-Ga2O3 film quality was investigated. The growth rate monotonically increased with increasing Ga supply rate. However, as the Ga supply rate was higher than 0.1 mmol/min, the growth rate further increased with increasing HCl supply rate. The surface roughness was improved by HCl support when the Ga supply rate was smaller than 0.07 mmol/min. The crystallinity of the α-Ga2O3 films exhibited an improvement with an increase in the film thickness, regardless of the solution preparation conditions, Ga supply rate, and HCl supply rate. These results indicate that there is a low correlation between the improvement of surface roughness and crystallinity in the α-Ga2O3 films grown under the conditions described in this paper.
摘要：
通过在多个溶液室中，通过HCl支持的薄雾化学气相沉积在c面蓝宝石衬底上生长了α-Ga2O3薄膜，研究了HCl载体对α-Ga2O3薄膜质量的影响。生长速率随着Ga供应速率的增加而单调增加。然而,当Ga供应速率高于0.1mmol/min时，随着HCl供应速率的增加，生长速率进一步增加。当Ga供应速率小于0.07mmol/min时,通过HCl载体改善了表面粗糙度。α-Ga2O3薄膜的结晶度随着薄膜厚度的增加而提高。无论溶液制备条件如何，Ga供应速率,和HCl供应速率。这些结果表明，在本文所述条件下生长的α-Ga2O3薄膜的表面粗糙度和结晶度的改善之间存在较低的相关性。
