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Abstract：
We examine the optical and electronic properties of a GaAs spherical quantum dot with a hydrogenic impurity in its center. We study two different confining potentials: (1) a modified Gaussian potential and (2) a power-exponential potential. Using the finite difference method, we solve the radial Schrodinger equation for the 1s and 1p energy levels and their probability densities and subsequently compute the optical absorption coefficient (OAC) for each confining potential using Fermi\'s golden rule. We discuss the role of different physical quantities influencing the behavior of the OAC, such as the structural parameters of each potential, the dipole matrix elements, and their energy separation. Our results show that modification of the structural physical parameters of each potential can enable new optoelectronic devices that can leverage inter-sub-band optical transitions.
摘要：
我们检查了中心具有氢杂质的GaAs球形量子点的光学和电子特性。我们研究了两种不同的限制势：（1）修正的高斯势和（2）幂指数势。使用有限差分法，我们求解1s和1p能级及其概率密度的径向薛定谔方程，然后使用费米的黄金法则计算每个限制势的光吸收系数（OAC）。我们讨论了影响OAC行为的不同物理量的作用，例如每个电位的结构参数，偶极子矩阵元素，和他们的能量分离。我们的结果表明，每个电势的结构物理参数的修改可以使能够利用子带间光学跃迁的新光电器件成为可能。
