PDF(Pubmed)
Abstract：
To meet the current demand for lead-free piezoelectric ceramics, a novel sol-gel synthesis route is presented for the preparation of Ba0.85Ca0.15Ti0.9Zr0.1O3 doped with cerium (Ce = 0, 0.01, and 0.02 mol%) and vanadium (V = 0, 0.3, and 0.4 mol%). X-ray diffraction patterns reveal the formation of a perovskite phase (space group P4mm) for all samples after calcination at 800 °C and sintering at 1250, 1350, and 1450 °C, where it is proposed that both dopants occupy the B site. Sintering studies show that V doping allows the sintering temperature to be reduced to at least 1250 °C. Undoped BCZT samples sintered at the same temperature show reduced functional properties compared to V-doped samples, i.e., d33 values increase by an order of magnitude with doping. The dissipation factor tan δ decreases with increasing sintering temperature for all doping concentrations, while the Curie temperature TC increases for all V-doped samples, reaching 120 °C for high-concentration co-doped samples. All results indicate that vanadium doping can facilitate the processing of BCZT at lower sintering temperatures without compromising performance while promoting thermal property stability.
摘要：
为了满足当前对无铅压电陶瓷的需求，提出了一种新颖的溶胶-凝胶合成路线，用于制备掺杂铈（Ce=0、0.01和0.02mol％）和钒（V=0、0.3和0.4mol％）的Ba0.85Ca0.15Ti0.9Zr0.1O3。X射线衍射图揭示了在800°C下煅烧并在1250、1350和1450°C下烧结后，所有样品都形成了钙钛矿相（空间群P4mm），其中建议两种掺杂剂都占据B位。烧结研究表明，V掺杂可以使烧结温度降低到至少1250°C。与V掺杂样品相比，在相同温度下烧结的未掺杂BCZT样品显示出降低的功能特性，即，d33值随着掺杂而增加一个数量级。对于所有掺杂浓度，损耗因子tanδ随烧结温度的升高而降低，当所有V掺杂样品的居里温度TC升高时，对于高浓度共掺杂样品，温度达到120°C。所有结果表明，钒掺杂可以在较低的烧结温度下促进BCZT的加工，而不会损害性能，同时提高热稳定性。
