关键词: CL EBSD cathodoluminescence hyperspectral microLED strain ultraviolet

来  源:   DOI:10.1088/1361-6528/ad5dba

Abstract:
Electron backscatter diffraction and cathodoluminescence are complementary scanning electron microscopy modes widely used in the characterisation of semiconductor films, respectively revealing the strain state of a crystalline material and the effect of this strain on the light emission from the sample. Conflicting beam, sample and detector geometries have meant it is not generally possible to acquire the two signals together during the same scan. Here, we present a method of achieving this simultaneous acquisition, by collecting the light emission through a transparent sample substrate. We apply this combination of techniques to investigate the strain field and resultant emission wavelength variation in a deep-ultraviolet micro-LED. For such compatible samples, this approach has the benefits of avoiding image alignment issues and minimising beam damage effects.
摘要:
电子背散射衍射和阴极发光是广泛用于半导体薄膜表征的互补扫描电子显微镜模式,分别揭示了晶体材料的应变状态以及该应变对样品发光的影响。碰撞梁,样品和检测器的几何形状意味着通常不可能在同一扫描期间一起采集两个信号。这里,我们提出了一种实现这种同时采集的方法,通过透明样品基板收集光发射。我们应用这种技术组合来研究深紫外微型LED中的应变场和由此产生的发射波长变化。对于此类兼容样品,这种方法具有避免图像对准问题和最小化光束损伤效应的优点。
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