Abstract：
Numerous studies shown that silicon (Si) enhanced plants\' resistance to cadmium (Cd). Most studies primarily focused on investigating the impact of Si on Cd accumulation. However, there is a lack of how Si enhanced Cd resistance through regulation of water balance. The study demonstrated that Si had a greater impact on increasing fresh weight compared to dry weight under Cd stress. This effect was mainly attributed to Si enhanced plant relative water content (RWC). Plant water content depends on the dynamic balance of water loss and water uptake. Our findings revealed that Si increased transpiration rate and stomatal conductance, leading to higher water loss. This, in turn, negatively impacted water content. The increased water content caused by Si could ascribe to improve root water uptake. The Si treatment significantly increased root hydraulic conductance (Lpr) by 131 % under Cd stress. This enhancement was attributed to Si upregulation genes expression of NtPIP1;1, NtPIP1;2, NtPIP1;3, and NtPIP2;1. Through meticulously designed scientific experiments, this study showed that Si enhanced AQP activity, leading to increased water content that diluted Cd concentration and ultimately improved plant Cd resistance. These findings offered fresh insights into the role of Si in bolstering plant resistance to Cd.
摘要：
大量研究表明，硅（Si）增强了植物对镉（Cd）的抗性。大多数研究主要集中在研究Si对Cd积累的影响。然而,缺乏Si如何通过调节水平衡来增强Cd抗性。研究表明，与Cd胁迫下的干重相比，Si对增加鲜重的影响更大。这种影响主要归因于Si提高了植物相对含水量（RWC）。植物含水量取决于水分损失和水分吸收的动态平衡。我们的发现表明Si增加了蒸腾速率和气孔导度，导致更高的水分流失。这个,反过来,对含水量产生负面影响。Si引起的含水量增加可以归因于提高根系吸水率。在Cd胁迫下，Si处理显着增加了根系水力传导率（Lpr）131％。这种增强归因于NtPIP1;1,NtPIP1;2,NtPIP1;3和NtPIP2;1的Si上调基因表达。通过精心设计的科学实验，这项研究表明，Si增强了AQP的活性，导致含水量增加，稀释Cd浓度，最终提高植物对Cd的抗性。这些发现为Si在增强植物对Cd的抗性中的作用提供了新的见解。
