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Abstract：
Ternary oxides are currently emerging as promising materials for optoelectronic devices and spintronics, surpassing binary oxides in terms of their superior properties. Among these, zinc stannate (Zn2SnO4) stands out due to its stability and attractive physical characteristics. However, despite its outstanding attributes, there is a need to further develop its magnetic properties for spintronic applications. In this study, Ni-doped Zn2SnO4 thin films were synthesized using the sol-gel method, and their magnetic characteristics were investigated for the first time. X-ray diffraction analysis confirmed the high crystallinity of the synthesized samples, even after the incorporation of Ni dopants, without any secondary phases. SEM imaging revealed the cubic structure morphology of the thin films. An increase in the bandgap, dependent on the Ni dopant concentration, was observed for doped zinc stannate, suggesting potential for tailored electronic properties. FTIR spectroscopy confirmed the presence of functional groups within the material. Notably, the magnetic properties of the thin films were analyzed using a vibrating sample magnetometer (VSM), revealing diamagnetic behavior for pure zinc stannate and ferromagnetic properties for Ni-doped Zn2SnO4, which increased with dopant concentration. Overall, the results highlight the excellent structural, optical, and ferromagnetic properties of Ni-doped Zn2SnO4 thin films, positioning them for diverse applications, particularly in optoelectronic and spintronic technology.
摘要：
三元氧化物目前正在成为光电器件和自旋电子学的有前途的材料，在其优越的性能方面超越二元氧化物。其中,锡酸锌（Zn2SnO4）由于其稳定性和有吸引力的物理特性而脱颖而出。然而,尽管其突出的属性，有必要进一步开发其磁性能的自旋电子应用。在这项研究中,采用溶胶-凝胶法合成了Ni掺杂的Zn2SnO4薄膜,并首次研究了它们的磁特性。X射线衍射分析证实了合成样品的高结晶度，即使在掺入镍掺杂剂之后，没有任何第二阶段。SEM成像显示薄膜的立方结构形态。带隙的增加，取决于Ni掺杂剂浓度，观察到掺杂的锡酸锌，暗示了定制电子特性的潜力。FTIR光谱证实材料内存在官能团。值得注意的是,使用振动样品磁强计（VSM）分析薄膜的磁性能，揭示了纯锡酸锌的抗磁性和掺杂Ni的Zn2SnO4的铁磁性，随掺杂剂浓度的增加而增加。总的来说,结果突出了优秀的结构，光学，Ni掺杂Zn2SnO4薄膜的铁磁性,将它们定位为不同的应用，特别是在光电和自旋电子技术。
