Abstract：
The rapid increase in data storage worldwide demands a substantial amount of energy consumption annually. Studies looking at low power consumption accompanied by high-performance memory are essential for next-generation memory. Here, Graphdiyne oxide (GDYO), characterized by facile resistive switching behavior, is systematically reported toward a low switching voltage memristor. The intrinsic large, homogeneous pore-size structure in GDYO facilitates ion diffusion processes, effectively suppressing the operating voltage. The theoretical approach highlights the remarkably low diffusion energy of the Ag ion (0.11 eV) and oxygen functional group (0.6 eV) within three layers of GDYO. The Ag/GDYO/Au memristor exhibits an ultralow operating voltage of 0.25 V with a GDYO thickness of 5 nm; meanwhile, the thicker GDYO of 29 nm presents multilevel memory with an ON/OFF ratio of up to 104. The findings shed light on memory resistive switching behavior, facilitating future improvements in GDYO-based devices toward opto-memristors, artificial synapses, and neuromorphic applications.
摘要：
全球范围内数据存储的快速增长需要每年大量的能耗。关于伴随高性能存储器的低功耗的研究对于下一代存储器是必不可少的。这里,氧化石墨炔（GDYO），其特点是容易的电阻开关行为，系统地报告了低开关电压忆阻器。内在的大，GDYO中均匀的孔径结构促进了离子扩散过程，有效地抑制工作电压。理论方法强调了GDYO三层中Ag离子（0.11eV）和氧官能团（0.6eV）的极低扩散能量。Ag/GDYO/Au忆阻器具有0.25V的超低工作电压，GDYO厚度为5nm；同时，29nm厚的GDYO呈现多电平存储器的开/关比高达104。这些发现揭示了记忆电阻开关行为，促进基于GDYO的设备未来向光忆阻器的改进，人工突触，和神经形态应用。
