PDF(Pubmed)
Abstract：
In this study, the effect of defects on the acceptor properties of nitrogen-doped ZnO nanoparticles (NPs) was investigated through the fabrication of light-emitting diodes (LEDs). Nitrogen-doped ZnO NPs were synthesized by an arc discharge in-gas evaporation method and post-annealed at 800 °C in an oxygen and nitrogen atmosphere. The annealed ZnO NPs were characterized by X-ray diffraction, scanning electron microscopy, Raman spectroscopy, and photoluminescence spectroscopy. It was found that the annealing of nitrogen-doped ZnO NPs in a nitrogen environment increased the number of zinc vacancies, while annealing in an oxygen environment increased the number of oxygen vacancies due to nitrogen desorption. The output characteristics of LEDs fabricated with oxygen-annealed NPs were degraded, while those with nitrogen-annealed NPs were significantly improved. From these results, the contribution of zinc vacancies to acceptor formation in ZnO NPs was confirmed for the first time in actual pn junction devices.
摘要：
在这项研究中,通过制备发光二极管（LED），研究了缺陷对氮掺杂ZnO纳米颗粒（NPs）受体性质的影响。通过电弧放电气体中蒸发法合成了氮掺杂的ZnONP，并在800°C的氧气和氮气气氛中进行了后退火。通过X射线衍射对退火后的ZnONPs进行了表征，扫描电子显微镜，拉曼光谱,和光致发光光谱。发现氮掺杂的ZnONP在氮环境中的退火增加了锌空位的数量，而在氧环境中退火则由于氮解吸而增加了氧空位的数量。用氧退火的NP制造的LED的输出特性下降，而那些氮退火的NP显著提高。从这些结果来看,在实际的pn结器件中，首次证实了锌空位对ZnONP中受体形成的贡献。
