Abstract：
Through various studies on thermoelectric (TE) materials, thin film configuration gives superior advantages over conventional bulk TEs, including adaptability to curved and flexible substrates. Several different thin film deposition methods have been explored, yet magnetron sputtering is still favorable due to its high deposition efficiency and scalability. Therefore, this study aims to fabricate a bismuth telluride (Bi2Te3) and antimony telluride (Sb2Te3) thin film via the radio frequency (RF) magnetron sputtering method. The thin films were deposited on soda lime glass substrates at ambient temperature. The substrates were first washed using water and soap, ultrasonically cleaned with methanol, acetone, ethanol, and deionized water for 10 min, dried with nitrogen gas and hot plate, and finally treated under UV ozone for 10 min to remove residues before the coating process. A sputter target of Bi2Te3 and Sb2Te3 with Argon gas was used, and pre-sputtering was done to clean the target\'s surface. Then, a few clean substrates were loaded into the sputtering chamber, and the chamber was vacuumed until the pressure reached 2 x 10-5 Torr. The thin films were deposited for 60 min with Argon flow of 4 sccm and RF power at 75 W and 30 W for Bi2Te3 and Sb2Te3, respectively. This method resulted in highly uniform n-type Bi2Te3 and p-type Sb2Te3 thin films.
摘要：
通过对热电（TE）材料的各种研究，薄膜配置比传统的散装TE具有优越的优势，包括对弯曲和柔性基板的适应性。已经探索了几种不同的薄膜沉积方法，然而，磁控溅射仍然是有利的，因为它的高沉积效率和可扩展性。因此,本研究旨在通过射频（RF）磁控溅射方法制备碲化铋（Bi2Te3）和碲化锑（Sb2Te3）薄膜。在环境温度下将薄膜沉积在钠钙玻璃基板上。首先用水和肥皂洗涤基材，用甲醇超声清洗,丙酮,乙醇,和去离子水10分钟，用氮气和热板干燥，最后在UV臭氧下处理10分钟以去除涂层过程之前的残留物。使用具有氩气的Bi2Te3和Sb2Te3溅射靶,并进行预溅射以清洁靶的表面。然后，将一些干净的基板装入溅射室，并且将腔室抽真空直到压力达到2×10-5托。对于Bi2Te3和Sb2Te3,分别用4sccm的氩气流和75W和30W的RF功率沉积薄膜60分钟。该方法产生高度均匀的n型Bi2Te3和p型Sb2Te3薄膜。
