关键词: ion transport iontronics memristor nanofluidics neuromorphic polyelectrolyte

来  源:   DOI:10.1021/acsnano.4c01730   PDF(Pubmed)

Abstract:
Iontronics that are capable of mimicking the functionality of biological systems within an artificial fluidic network have long been pursued for biomedical applications and ion-based intelligence systems. Here, we report on facile and robust realization of iontronic bipolar memristors featuring a three-layer polyelectrolyte gel structure. Significant memristive hysteresis of ion currents was successfully accomplished, and the memory time proved geometrically scalable from 200 to 4000 s. These characteristics were enabled by the ion concentration polarization-induced rectification ratio within the polyelectrolyte gels. The memristors exhibited memory dynamics akin to those observed in unipolar devices, while the bipolar structure notably enabled prolonged memory time and enhanced the ion conductance switching ratio with mesoscale (10-1000 μm) geometry precision. These properties endow the devices with the capability of effective neuromorphic processing with pulse-based input voltage signals. Owing to their simple fabrication process and superior memristive performance, the presented iontronic bipolar memristors are versatile and can be easily integrated into small-scale iontronic circuits, thereby facilitating advanced neuromorphic computing functionalities.
摘要:
长期以来,生物医学应用和基于离子的智能系统一直追求能够模仿人工流体网络中生物系统功能的Iontronics。这里,我们报告了具有三层聚电解质凝胶结构的iontronic双极忆阻器的容易和强大的实现。成功实现了离子电流的显着忆阻滞后,并且记忆时间被证明在200至4000s之间具有几何可伸缩性。这些特性是通过聚电解质凝胶内的离子浓度极化诱导的整流比实现的。忆阻器表现出类似于在单极设备中观察到的记忆动力学,而双极结构显着延长了存储时间,并以中尺度(10-1000μm)的几何精度提高了离子电导切换率。这些特性赋予设备以基于脉冲的输入电压信号进行有效神经形态处理的能力。由于其简单的制造工艺和优越的忆阻性能,所提出的iontronic双极忆阻器是通用的,可以很容易地集成到小型iontronic电路,从而促进先进的神经形态计算功能。
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