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Abstract：
Nanoscopic magnetic domain walls (DWs), via their absence or presence, enable highly interesting binary data bits. The current-controlled, high-speed, synchronous motion of sequences of chiral DWs in magnetic nanoconduits induced by current pulses makes possible high-performance spintronic memory and logic devices. The closer the spacing between neighboring DWs in an individual conduit or nanowire, the higher the data density of the device, but at the same time, the more difficult it is to read the bits. Here, we show how the DW spacing can be dynamically varied to facilitate reading for otherwise closely packed bits. In the first method, the current density is increased in portions of the conduit that, thereby, locally speeds up the DWs, decompressing them and making them easier to read. In the second method, a localized bias current is used to compress and decompress the DW spacing. Both of these methods are demonstrated experimentally and validated by micromagnetic simulations. DW compression and decompression rates as high as 88% are shown. These methods can increase the density with which DWs can be packed in future DW-based spintronic devices by more than an order of magnitude.
摘要：
纳米磁畴壁(DW),通过他们的缺席或存在，启用非常有趣的二进制数据位。电流控制，高速,由电流脉冲引起的磁性纳米管道中手性DWs序列的同步运动使高性能自旋电子存储器和逻辑器件成为可能。单个导管或纳米线中相邻DWs之间的间距越近，设备的数据密度越高，但同时,越难读位。这里,我们展示了如何动态地改变DW间距，以便于读取其他紧密打包的位。在第一种方法中，电流密度在导管的部分增加，因此，本地加速DWs，解压缩它们，使它们更容易阅读。在第二种方法中，局部偏置电流用于压缩和解压缩DW间距。这两种方法都经过了实验证明，并通过微磁模拟进行了验证。显示了高达88%的DW压缩和解压缩率。这些方法可以将DW在未来的基于DW的自旋电子器件中封装的密度增加一个数量级以上。
