关键词: ZnO nanoarray poly(3,4-ethylenedioxyselenphene) poly(terthienyl) self-powered UV photodetector

来  源:   DOI:10.3390/nano14080720   PDF(Pubmed)

Abstract:
To solve the problem that zinc oxide nanorods (ZnO NRs)-based self-powered ultraviolet (UV) photodetectors cannot obtain both higher responsiveness and shorter response time, P(EDOS-TTh) was prepared using 3,4-ethylenedioxyselenphene (EDOS) and terthiophene (TTh) as copolymers, which modify the ZnO NRs surface, and the ZnO/P(EDOS-TTh) P-N junction self-powered UV device is assembled. The effect of the number of electrochemical polymerization cycles on the UV photodetection performance of ZnO/P(EDOS-TTh) P-N heterojunction was studied by adjusting the number of electrochemical polymerization cycles at the monomer molar ratio of 1:1. Benefiting from the enhanced built-in electric field of the ZnO/P(EDOS-TTh) interface, balancing photogenerated carriers, and charge separation and transport. The results show that the contact between N-type ZnO NRs and P-type P(EDOS-TTh) is best when the number of polymerization cycles is 3, due to the fact that EDOS-TTh and ZnO NRs form excellent P-N heterojunctions with strong internal electric fields, and the devices show good pyroelectric effect and UV photodetection performance. Under 0 V bias and 0.32 mW/cm2 UV irradiation, the responsivity (R) of ZnO/P(EDOS-TTh) reaches 3.31 mA/W, the detectivity (D*) is 7.25 × 1010 Jones, and the response time is significantly shortened. The rise time is 0.086 s, which exhibited excellent photoelectric properties and stability. UV photodetection performance with high sensitivity and fast response time is achieved.
摘要:
为了解决氧化锌纳米棒(ZnONRs)为基础的自供电紫外(UV)光电探测器不能同时获得更高的响应性和更短的响应时间的问题,P(EDOS-TTh)是以3,4-亚乙基二氧硒芬(EDOS)和叔噻吩(TTh)为共聚物制备的,修饰ZnONRs表面,组装了ZnO/P(EDOS-TTh)P-N结自供电紫外器件。通过在单体摩尔比为1:1的条件下调节电化学聚合循环次数,研究了电化学聚合循环次数对ZnO/P(EDOS-TTh)P-N异质结紫外光检测性能的影响。受益于ZnO/P(EDOS-TTh)界面增强的内置电场,平衡光生载流子,和电荷分离和运输。结果表明,当聚合循环数为3时,N型ZnONRs与P型P(EDOS-TTh)之间的接触最好,这是由于EDOS-TTh和ZnONRs形成了具有强内部电场的优异的P-N异质结,器件表现出良好的热电效应和紫外光检测性能。在0V偏压和0.32mW/cm2紫外线照射下,ZnO/P(EDOS-TTh)的响应度(R)达到3.31mA/W,探测率(D*)为7.25×1010琼斯,响应时间显著缩短。上升时间为0.086s,表现出优异的光电性能和稳定性。实现了高灵敏度和快速响应时间的紫外光检测性能。
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