Abstract：
In the quest for advanced memristor technologies, this study introduces the synthesis of delta-formamidinium lead iodide (δ-FAPbI3) nanoparticles (NPs) and their self-assembly into nanorods (NRs). The formation of these NRs is facilitated by iodide vacancies, promoting the fusion of individual NPs at higher concentrations. Notably, these NRs exhibit robust stability under ambient conditions, a distinctive advantage attributed to the presence of capping ligands and a crystal lattice structured around face-sharing octahedra. When employed as the active layer in resistive random-access memory devices, these NRs demonstrate exceptional bipolar switching properties. A remarkable on/off ratio (105) is achieved, surpassing the performances of previously reported low-dimensional perovskite derivatives and α-FAPbI3 NP-based devices. This enhanced performance is attributed to the low off-state current owing to the reduced number of halide vacancies, intrinsic low dimensionality, and the parallel alignment of NRs on the FTO substrate. This study not only provides significant insights into the development of superior materials for memristor applications but also opens new avenues for exploring low-dimensional perovskite derivatives in advanced electronic devices.
摘要：
为了寻求先进的忆阻器技术，这项研究介绍了δ-甲脒碘化铅（δ-FAPbI3）纳米粒子（NPs）的合成及其自组装成纳米棒（NRs）。碘化物空位促进了这些NRs的形成，在较高浓度下促进单个NP的融合。值得注意的是,这些NR在环境条件下表现出稳健的稳定性，一个独特的优势归因于存在加帽配体和围绕共用八面体结构的晶格。当用作电阻式随机存取存储器件中的有源层时，这些NRs展示了特殊的双极开关特性。实现了显著的开/关比(105)，超越了先前报道的低维钙钛矿衍生物和基于α-FAPbI3NP的器件的性能。这种增强的性能归因于低关态电流由于减少数量的卤化物空位，固有的低维度，以及在FTO衬底上的NRs的平行排列。这项研究不仅为开发用于忆阻器应用的优质材料提供了重要见解，而且为在先进电子设备中探索低维钙钛矿衍生物开辟了新途径。
