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Abstract：
In this research, the formation processes of CuBi2O4 films were examined using atomic force microscopy, energy dispersive analysis and X-ray diffraction analysis methods. The films were synthesized through electrochemical deposition from sulfuric acid solutions at a potential difference of 3.5 V. The duration of film growth was set to between 10 and 90 min to assess the possibility of controlled film growth and preserve the stability of their structural properties during growth over an extended period. An analysis of the data obtained by X-ray diffraction revealed that the resulting film samples are highly ordered structures with a tetragonal CuBi2O4 phase. The results of the connection between the thickness of CuBi2O4 films and strength properties depending on the time of film deposition were obtained. The results of the shielding efficiency of low-energy γ-quanta using CuBi2O4 films were obtained.
摘要：
在这项研究中,使用原子力显微镜检查了CuBi2O4薄膜的形成过程，能量色散分析和X射线衍射分析方法。通过在3.5V的电位差下从硫酸溶液中进行电化学沉积来合成膜。将膜生长的持续时间设定为10至90分钟，以评估受控膜生长的可能性并在长时间的生长过程中保持其结构性能的稳定性。通过X射线衍射获得的数据的分析表明，所得薄膜样品是具有四方CuBi2O4相的高度有序结构。获得了CuBi2O4膜的厚度与取决于膜沉积时间的强度性能之间的联系的结果。获得了使用CuBi2O4薄膜对低能γ量子的屏蔽效率的结果。
