Abstract：
Hafnia-based ferroelectrics have gained much attention because they can be used in highly scaled, advanced complementary metal-oxide semiconductor (CMOS) memory devices. However, thermal stability should be considered when integrating hafnia-based ferroelectric transistors in advanced CMOS devices, as they can be exposed to high-temperature processes. This work proposed that doping of Al in hafnia-based ferroelectric material can lead to high thermal stability. A ferroelectric capacitor based on Al-doped hafnia, which can be used for one-transistor-one-capacitor applications, exhibits stable operation even after annealing at 900 °C. Moreover, it demonstrates that the ferroelectric transistors based on Al-doped hafnia for one-transistor applications, such as ferroelectric NAND, retain their memory states for 10 years at 100 °C. This study presents a practical method to achieve thermally stable ferroelectric memories capable of enduring high-temperature processes and operation conditions.
摘要：
Hafnia基铁电体获得了广泛的关注，因为它们可以用于高比例，先进的互补金属氧化物半导体（CMOS）存储器件。然而,在先进的CMOS器件中集成基于铪的铁电晶体管时，应考虑热稳定性，因为它们可以暴露在高温过程中。这项工作提出了在氧化铪基铁电材料中掺杂Al可以导致高的热稳定性。基于铝掺杂氧化铪的铁电电容器，可用于单晶体管单电容器应用，即使在900°C退火后也表现出稳定的操作。此外，它证明了基于铝掺杂氧化铪的铁电晶体管用于单晶体管应用，例如铁电NAND，在100℃下保持他们的记忆状态10年。这项研究提出了一种实用的方法来实现能够承受高温工艺和操作条件的热稳定的铁电存储器。
