关键词: Auditory development Bilateral cochlear implantation Electrically evoked auditory brainstem response Inter-implant interval Unilateral cochlear implant

Mesh : Child Humans Cochlear Implants Cochlear Implantation Hearing Loss, Sensorineural / surgery Evoked Potentials, Auditory, Brain Stem / physiology Brain Stem / surgery Deafness / surgery

来  源:   DOI:10.1007/s00405-023-08285-2

Abstract:
OBJECTIVE: To investigate the effect of the interval between bilateral cochlear implantation on the development of bilateral peripheral auditory pathways as revealed by the electrically evoked auditory brainstem response (EABR).
METHODS: Fifty-eight children with profound bilateral sensorineural hearing loss were recruited. Among them, 33 children received sequential bilateral cochlear implants (CIs), and 25 children received simultaneous bilateral CIs. The bilateral EABRs evoked by electrical stimulation from the CI electrode were recorded on the day of second-side CI activation.
RESULTS: The latencies of wave III (eIII) and wave V (eV) were significantly shorter on the first CI side than on the second CI side in children with sequential bilateral CIs but were similar between the two sides in children with simultaneous bilateral CIs. Furthermore, the latencies were prolonged from apical to basal channels along the cochlea in the two groups. In children with sequential CIs, the inter-implant interval was negatively correlated with the eV latency on the first CI side and was positively correlated with bilateral differences in the eIII and eV latencies.
CONCLUSIONS: Unilateral CI use promotes the maturation of ipsilateral auditory conduction function. However, a longer inter-implant interval results in more unbalanced development of bilateral auditory brainstem pathways. Bilateral cochlear implantation with no or a short interval is recommended.
摘要:
目的:探讨电诱发听觉脑干反应(EABR)显示的双侧人工耳蜗植入间隔时间对双侧外周听觉通路发育的影响。
方法:招募了58名患有严重双侧感音神经性听力损失的儿童。其中,33名儿童接受了序贯双侧耳蜗植入(CIs),25名儿童同时接受了双边CI。在第二侧CI激活当天记录由CI电极电刺激引起的双侧EABR。
结果:在序贯性双侧CI的儿童中,波III(eIII)和波V(eV)的潜伏期在第一侧明显短于第二侧,但两侧相似。同时双侧CI的儿童。此外,在两组中,沿耳蜗从顶端到基底通道的潜伏期延长。在患有sequentialCI的儿童中,植入间期与firstCI侧的eV潜伏期呈负相关,与eIII和eV潜伏期的双侧差异呈正相关.
结论:单侧CI的使用促进了同侧听觉传导功能的成熟。然而,较长的植入间隔时间会导致双侧听觉脑干通路的发育更加不平衡.建议无或间隔短的双侧人工耳蜗植入。
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