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Abstract：
This paper presents a 160 GHz, D-band, low-noise amplifier (LNA) and a D-band power amplifier (PA) implemented in the Global Foundries 22 nm CMOS FDSOI. The two designs are used for the contactless monitoring of vital signs in the D-band. The LNA is based on multiple stages of a cascode amplifier topology with a common source topology adopted as the input and output stages. The input stage of the LNA is designed for simultaneous input and output matching, while the inter-stage-matching networks are designed for maximizing the voltage swing. The LNA achieved a maximum gain of 17 dB at 163 GHz. The input return loss was quite poor in the 157-166 GHz frequency band. The -3 dB gain bandwidth corresponded to 157-166 GHz. The measured noise figure was between 7.6 dB and 8 dB within the -3 dB gain bandwidth. The power amplifier achieved an output 1 dB compression point of 6.8 dBm at 159.75 GHz. The measured power consumptions of the LNA and the PA were 28.8 mW and 10.8 mW, respectively.
摘要：
本文提出了一种160GHz,D波段,低噪声放大器（LNA）和D波段功率放大器（PA）在全球创始人22nmCMOSFDSOI中实现。这两种设计用于D波段中生命体征的非接触式监测。LNA基于级联放大器拓扑的多级,其中采用公共源拓扑作为输入和输出级。LNA的输入级设计用于同时输入和输出匹配，而级间匹配网络设计用于最大化电压摆幅。LNA在163GHz实现了17dB的最大增益。在157-166GHz频带中，输入回波损耗非常差。-3dB增益带宽对应于157-166GHz。在-3dB增益带宽内测得的噪声系数在7.6dB和8dB之间。功率放大器在159.75GHz处实现了6.8dBm的输出1dB压缩点。测得的LNA和PA的功耗分别为28.8mW和10.8mW,分别。
