Abstract：
The p-n junction with bipolar characteristics sets the fundamental unit to build electronics while its unique rectification behavior constrains the degree of carrier tunability for expanded functionalities. Herein, a bipolar-junction photoelectrode employed with a gallium nitride (GaN) p-n homojunction nanowire array that operates in electrolyte is reported, demonstrating bipolar photoresponse controlled by different wavelengths of light. Significantly, with rational decoration of a ruthenium oxides (RuOx ) layer on nanowires guided by theoretical modeling, the resulting RuOx /p-n GaN photoelectrode exhibits unambiguously boosted bipolar photoresponse by an enhancement of 775% and 3000% for positive and negative photocurrents, respectively, compared to the pristine nanowires. The loading of the RuOx layer on nanowire surface optimizes surface band bending, which facilitates charge transfer across the GaN/electrolyte interface, meanwhile promoting the efficiency of redox reaction for both hydrogen evolution reaction and oxygen evolution reaction which corresponds to the negative and positive photocurrents, respectively. Finally, a dual-channel optical communication system incorporated with such photoelectrode is constructed with using only one photoelectrode to decode dual-band signals with encrypted property. The proposed bipolar device architecture presents a viable route to manipulate the carrier dynamics for the development of a plethora of multifunctional optoelectronic devices for future sensing, communication, and imaging systems.
摘要：
具有双极特性的p-n结设置了基本单元来构建电子器件，而其独特的整流行为限制了扩展功能的载流子可调性程度。在这里，报告了在电解质中运行的与氮化镓（GaN）p-n同质结纳米线阵列一起使用的双极结光电极，展示了由不同波长的光控制的双极光响应。重要的是,在理论建模的指导下，对纳米线上的氧化钌（RuOx）层进行合理装饰，所得的RuOx/p-nGaN光电极表现出明确的增强的双极光响应，对正负光电流增强了775％和3000％，分别,与原始纳米线相比。纳米线表面上RuOx层的负载优化了表面带弯曲，这促进了跨GaN/电解质界面的电荷转移，同时提高了对应于负和正光电流的析氢反应和析氧反应的氧化还原反应效率，分别。最后,本发明公开了一种双通道光通信系统,该双通道光通信系统结合了这种光电极,仅使用一个光电极来解码具有加密特性的双频带信号。所提出的双极器件架构提供了一种可行的途径来操纵载流子动力学，以开发过多的多功能光电器件，用于未来的传感。通信,和成像系统。
