Abstract：
In this work, a promising dual-gated thin film transistor (TFT) structure has been proposed and introduced in the shift register (SR)-integrated circuits to reduce the rising time. The threshold voltage can be simultaneously changed by the top gate and the bottom gate in the proposed dual-gated TFTs. When the SR circuits start to export the scan signals in the displays, the driving currents in the SR circuits are increased by switching the working station of driving TFTs from the enhancement characterization to the depletion characterization. Subsequently, the detailed smart spice simulation has been used to study the function of the proposed SR circuits. In the next step, the proposed SR circuits have been fabricated in a G4.5 active-matrix organic light-emitting diode manufacture factory. The simulated and experimental results indicate that the shift register pulses with the full swing amplitude can be obtained in the SR circuits. Moreover, in contrast to the conventional SR circuits employing with the single-gated TFTs, it has been found that the rising time of the output signals can be reduced from 3.75 μs to 1.23 μs in the proposed SR circuits with the dual-gated TFTs, thus exhibiting the significant improvement of the driving force in the proposed SR circuits. Finally, we demonstrated a 31-inch 4K AMOLED display with the proposed SR circuits.
摘要：
在这项工作中,提出了一种有前途的双栅薄膜晶体管（TFT）结构，并将其引入移位寄存器（SR）集成电路中以减少上升时间。在所提出的双栅极TFT中,可以通过顶部栅极和底部栅极同时改变阈值电压。当SR电路开始输出显示器中的扫描信号时，例如,通过将驱动TFT的工作站从增强表征切换到耗尽表征来增加SR电路中的驱动电流。随后，详细的智能香料仿真已用于研究所提出的SR电路的功能。下一步,所提出的SR电路是在G4.5有源矩阵有机发光二极管制造工厂中制造的。仿真和实验结果表明，在SR电路中可以获得具有全摆幅的移位寄存器脉冲。此外，与采用单栅TFT的传统SR电路相比，已经发现，在提出的具有双栅极TFT的SR电路中，输出信号的上升时间可以从3.75μs减少到1.23μs。因此在所提出的SR电路中表现出驱动力的显著改进。最后,我们展示了一个31英寸4KAMOLED显示器与建议的SR电路。
