Abstract：
Desulfovibrio vulgaris biofilm was pre-grown on Ti coupons for 7 d and then the biofilm covered coupons were incubated again with fresh culture media with 10 % (reduced) and 100 % (normal) carbon source levels, respectively. After the pre-growth, sessile D. vulgaris cell count reached 107 cells/cm2. The sessile cell counts were 2 × 107 and 4.2 × 107 cells/cm2 for 10 % and 100 % carbon sources, respectively after the subsequent 7 d starvation test. The maximum pit depth after the 7 d pre-growth was 4.7 µm. After the additional 7 d of the starvation test, the maximum pit depth increased to 5.1 µm for 100 % carbon source vs 6.2 µm for 10 % carbon source. Corrosion current density (icorr) from potentiodynamic polarization data at the end of the 7 d starvation test for 10 % carbon source was more than 3 times of that for 100 % carbon source, despite a reduced sessile cell count with 10 % carbon source. The polarization resistance (Rp) started to decrease within minutes after 20 ppm (w/w) riboflavin (electron mediator) injection. The carbon starvation data and riboflavin corrosion acceleration data both suggested that D. vulgaris utilized elemental Ti as an electron source to replace carbon source as the electron donor during carbon source starvation.
摘要：
将普通脱硫弧菌生物膜在Ti试片上预生长7d，然后将生物膜覆盖的试片再次与具有10％（减少）和100％（正常）碳源水平的新鲜培养基一起孵育，分别。在预生长之后，无柄D.vulgaris细胞计数达到107个细胞/cm2。10％和100％碳源的无柄细胞计数分别为2×107和4.2×107个细胞/cm2，分别在随后的7d饥饿试验后。7d预生长后的最大凹坑深度为4.7µm。在额外的7d饥饿测试后，100％碳源的最大凹坑深度增加到5.1µm，而10％碳源的最大凹坑深度增加到6.2µm。10%碳源7d饥饿试验结束时动电位极化数据的腐蚀电流密度(Icorr)是100%碳源的3倍以上,尽管10％碳源的无柄细胞计数减少。极化电阻(Rp)在20ppm(w/w)核黄素(电子介体)注入后数分钟内开始降低。碳饥饿数据和核黄素腐蚀加速数据均表明，普通D.vulgaris在碳源饥饿期间利用元素Ti作为电子源代替碳源作为电子供体。
