Abstract：
In this investigation, p-Mg2Si/n-Si heterojunction photodetector (PD) is fabricated by magnetron sputtering and low vacuum annealing in the absence of argon or nitrogen atmosphere. Multilayer Graphene (MLG)/Mg2Si/Si heterojunction PD is first fabricated by transferring MLG to Mg2Si/Si heterojunction substrate using the suspended self-help transfer MLG method. After characterizing the phase composition, morphology and detection properties of Mg2Si/Si and MLG/Mg2Si/Si heterojunction PDs, the successful fabrication of the Mg2Si/Si and MLG/Mg2Si/Si heterojunction PDs are confirmed and some detection capabilities are realized. Compared with the Mg2Si/Si heterojunction PD, the light absorption and the ability to effectively separate and transfer photogenerated carriers of MLG/Mg2Si/Si heterojunction PD are improved. The responsivity, external quantum efficiency (EQE), noise equivalent power (NEP), detectivity (D*), on/off ratio and other detection properties are enhanced. The peak responsivity and EQE of the MLG/Mg2Si/Si heterojunction PD are 23.7 mA/W and 2.75%, respectively, which are better than the previous 1-10 mA/W and 2.3%. The results illustrate that the fabrication technology of introducing MLG to regulate the detection properties of the Mg2Si/Si heterojunction PD is feasible. In addition, this study reveals the potential of MLG to enhance the detection properties of optoelectronic devices, broadens the application prospect of the Mg2Si/Si-based heterojunction PDs and provides a direction for the regulation of optoelectronic devices.
摘要：
在这次调查中,p-Mg2Si/n-Si异质结光电探测器（PD）是在没有氩气或氮气气氛的情况下通过磁控溅射和低真空退火制造的。首先通过使用悬浮自助转移MLG方法将MLG转移到Mg2Si/Si异质结衬底来制造多层石墨烯(MLG)/Mg2Si/Si异质结PD。在表征相组成之后，Mg2Si/Si和MLG/Mg2Si/Si异质结PDs的形貌和检测性能,证实了Mg2Si/Si和MLG/Mg2Si/Si异质结PD的成功制造，并实现了一些检测能力。与Mg2Si/Si异质结PD比拟，提高了MLG/Mg2Si/Si异质结PD的光吸收和有效分离转移光生载流子的能力。响应度，外量子效率(EQE)，噪声等效功率(NEP),探测率（D*），开/关比和其他检测特性得到增强。MLG/Mg2Si/Si异质结PD的峰值响应度和EQE分别为23.7mA/W和2.75％，分别,比以前的1-10mA/W和2.3%更好。结果表明，引入MLG调节Mg2Si/Si异质结PD的检测性能的制备技术是可行的。此外,这项研究揭示了MLG增强光电器件检测性能的潜力，拓宽了Mg2Si/Si基异质结PDs的应用前景,为光电器件的调控提供了方向。
