Band-Offset Analysis of Atomic Layer Deposition La2O3 on GaAs(111), (110), and (100) Surfaces for Epitaxial Growth.

• 影响指数: 10.383
• 发表时间: Aug 2019 7
• 来源期刊: ACS Appl Mater Interfaces
• DOI: 10.1021/acsami.9b08436
• PMID: 31294539
• 文章类型: Journal Article
• 中科院分区: Q1;Q1
• 作者列表: Lou X,Gong X,Feng J,Gordon R

关键词: ALD; GaAs; LaO; band offset; crystallinity; epitaxy

Abstract

In this paper, we measured band offsets for La2O3 prepared by atomic layer deposition on GaAs(111), (110), and (100) surfaces. La2O3 grows epitaxially on GaAs(111) with very low interfacial defect density and exhibits a band offset that is predicted for defect-free interfaces by the metal-induced gap state theory. On the other hand, the polycrystalline La2O3 deposited on GaAs(110) and (100) shows band offsets close to the values predicted for Fermi-level pinning. In this way, band offsets can qualitatively estimate interfacial defect levels.