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Abstract：
The xenon plasma focused ion beam instrument (PFIB), holds significant promise in expanding the applications of focused ion beams in new technology thrust areas. In this paper, we have explored the operational characteristics of a Tescan FERA3 XMH PFIB instrument with the aim of meeting current and future challenges in the semiconductor industry. A two part approach, with the first part aimed at optimizing the ion column and the second optimizing specimen preparation, has been undertaken. Detailed studies characterizing the ion column, optimizing for high-current/high mill rate activities, have been described to support a better understanding of the PFIB. In addition, a novel single-crystal sacrificial mask method has been developed and implemented for use in the PFIB. Using this combined approach, we have achieved high-quality images with minimal artifacts, while retaining the shorter throughput times of the PFIB. Although the work presented in this paper has been performed on a specific instrument, the authors hope that these studies will provide general insight to direct further improvement of PFIB design and applications.
摘要：
氙等离子体聚焦离子束仪(PFIB),在扩展聚焦离子束在新技术推力领域的应用方面具有重要的前景。在本文中,我们探索了TescanFERA3XMHPFIB仪器的操作特性，旨在应对半导体行业当前和未来的挑战。两部分方法，第一部分旨在优化离子柱，第二部分旨在优化标本制备，已经进行了。表征离子柱的详细研究，优化高电流/高磨机速率活动，已经被描述为支持对PFIB的更好理解。此外,一种新的单晶牺牲掩模方法已被开发和实施用于PFIB。使用这种组合方法，我们已经实现了高质量的图像与最小的伪影，同时保留PFIB的较短吞吐量时间。尽管本文介绍的工作是在特定的仪器上进行的，作者希望这些研究将为进一步改进PFIB设计和应用提供一般性见解。
